IndiumV3, Main, Repository, bibRecord, 000443

Suppression of lateral growth in InAs/InAsSb heterostructured nanowires

Identifieur interne : 000443 ( Main/Repository ); précédent : 000442; suivant : 000444

Suppression of lateral growth in InAs/InAsSb heterostructured nanowires

Auteurs : RBID : Pascal:13-0105551

Descripteurs français

Pascal (Inist)
- Croissance latérale, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Hétérostructure, Nanofil, Nanomatériau, Dépendance température, Mécanisme croissance, Microscopie électronique balayage transmission, Propriété électrique, Morphologie cristalline, Epitaxie jet chimique, Composé ternaire, Antimoine, Synthèse nanomatériau, InAs, InAsSb, 8116B, 8107V, 8110A.
Wicri :
- concept : Antimoine.

English descriptors

KwdEn :
- Antimony, Chemical beam epitaxy, Crystal morphology, Electrical properties, Growth mechanism, Heterostructures, III-V compound, III-V semiconductors, Indium arsenides, Lateral growth, Nanomaterial synthesis, Nanostructured materials, Nanowires, Scanning transmission electron microscopy, Temperature dependence, Ternary compounds.

Abstract

It is well known that a significant lateral growth is observed in the InAsSb sections of InAs/InAsSb heterostructured nanowires (NWs) with intermediate Sb content that prevents the independent control of NW diameter and length. Here we demonstrate that this lateral growth can be suppressed by increasing the growth temperature of the InAsSb segment and by reducing the InAs stem length. Optimized InAsSb sections show good structural and electrical properties. The mechanism driving this reduced lateral growth and its relevance toward the synthesis of highly controlled InAs/InAsSb heterostructured NWs are discussed.

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Pascal:13-0105551

Le document en format XML

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<front><div type="abstract" xml:lang="en">It is well known that a significant lateral growth is observed in the InAsSb sections of InAs/InAsSb heterostructured nanowires (NWs) with intermediate Sb content that prevents the independent control of NW diameter and length. Here we demonstrate that this lateral growth can be suppressed by increasing the growth temperature of the InAsSb segment and by reducing the InAs stem length. Optimized InAsSb sections show good structural and electrical properties. The mechanism driving this reduced lateral growth and its relevance toward the synthesis of highly controlled InAs/InAsSb heterostructured NWs are discussed.</div>
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Suppression of lateral growth in InAs/InAsSb heterostructured nanowires

Suppression of lateral growth in InAs/InAsSb heterostructured nanowires

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri